The paper discusses the results of a study on the formation of indium oxide
nanoclusters in silica samples implanted with high energy indium ions. Trace
quantities of indium oxide were found on as-implanted samples. On annealing
in vacuum/oxygen atmosphere significant increase in the quantity of indium
oxide phase was observed. A mechanism is proposed for the formation of
indium oxide and is mainly attributed to the reaction of metallic indium
with the oxygen released from the silica matrix by ballistic process. During
annealing in oxygen atmosphere the oxygen diffusing into the silica also
plays a role in the oxidation of indium NCs.